JPH0354854B2 - - Google Patents

Info

Publication number
JPH0354854B2
JPH0354854B2 JP61099928A JP9992886A JPH0354854B2 JP H0354854 B2 JPH0354854 B2 JP H0354854B2 JP 61099928 A JP61099928 A JP 61099928A JP 9992886 A JP9992886 A JP 9992886A JP H0354854 B2 JPH0354854 B2 JP H0354854B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
thin film
film layer
semiconductor thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61099928A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62256478A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP61099928A priority Critical patent/JPS62256478A/ja
Priority to CA000535564A priority patent/CA1277440C/en
Priority to US07/042,330 priority patent/US4894691A/en
Priority to EP87106250A priority patent/EP0243953B1/en
Priority to DE8787106250T priority patent/DE3783507T2/de
Priority to AU72653/87A priority patent/AU602143B2/en
Publication of JPS62256478A publication Critical patent/JPS62256478A/ja
Publication of JPH0354854B2 publication Critical patent/JPH0354854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP61099928A 1986-04-30 1986-04-30 化合物半導体装置 Granted JPS62256478A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP61099928A JPS62256478A (ja) 1986-04-30 1986-04-30 化合物半導体装置
CA000535564A CA1277440C (en) 1986-04-30 1987-04-24 Compound semiconductor device with laminated channel layer
US07/042,330 US4894691A (en) 1986-04-30 1987-04-24 Compound semiconductor device with superlattice channel region
EP87106250A EP0243953B1 (en) 1986-04-30 1987-04-29 Compound semiconductor device
DE8787106250T DE3783507T2 (de) 1986-04-30 1987-04-29 Zusammengesetztes halbleiterbauelement.
AU72653/87A AU602143B2 (en) 1986-04-30 1987-05-08 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61099928A JPS62256478A (ja) 1986-04-30 1986-04-30 化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS62256478A JPS62256478A (ja) 1987-11-09
JPH0354854B2 true JPH0354854B2 (en]) 1991-08-21

Family

ID=14260410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61099928A Granted JPS62256478A (ja) 1986-04-30 1986-04-30 化合物半導体装置

Country Status (6)

Country Link
US (1) US4894691A (en])
EP (1) EP0243953B1 (en])
JP (1) JPS62256478A (en])
AU (1) AU602143B2 (en])
CA (1) CA1277440C (en])
DE (1) DE3783507T2 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014017063A1 (ja) * 2012-07-24 2014-01-30 住友化学株式会社 半導体基板、半導体基板の製造方法及び複合基板の製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227644A (en) * 1989-07-06 1993-07-13 Nec Corporation Heterojunction field effect transistor with improve carrier density and mobility
US5633512A (en) * 1990-05-23 1997-05-27 Canon Kabushiki Kaisha Semiconductor device for varying the mobility of electrons by light irradiation
JP2919581B2 (ja) * 1990-08-31 1999-07-12 三洋電機株式会社 速度変調トランジスタ
GB2248966A (en) * 1990-10-19 1992-04-22 Philips Electronic Associated Field effect semiconductor devices
JP2786327B2 (ja) * 1990-10-25 1998-08-13 三菱電機株式会社 ヘテロ接合電界効果トランジスタ
CA2078540A1 (en) * 1991-09-17 1993-03-18 So Tanaka Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film
US5274246A (en) * 1992-05-04 1993-12-28 The United States Of America As Represented By The Secretary Of The Air Force Optical modulation and switching with enhanced third order nonlinearity multiple quantum well effects
NZ286025A (en) * 1995-03-01 1997-04-24 Colgate Palmolive Co Laundry detergent concentrates; contains nonionic surfactant and water insoluble oil with a hydrophilic polar group, converts to liquid crystal phase dispersion on dilution
JP3141838B2 (ja) * 1998-03-12 2001-03-07 日本電気株式会社 電界効果トランジスタ
US6878576B1 (en) * 2003-06-26 2005-04-12 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US6830964B1 (en) * 2003-06-26 2004-12-14 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
TWI404209B (zh) * 2009-12-31 2013-08-01 Univ Nat Chiao Tung 高電子遷移率電晶體及其製作方法
US8690134B1 (en) 2012-06-06 2014-04-08 Ben J. Saam Equipment support rack assembly

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
JPS58178572A (ja) * 1982-04-14 1983-10-19 Hiroyuki Sakaki 移動度変調形電界効果トランジスタ
US4797716A (en) * 1984-04-04 1989-01-10 The United States Of America As Represented By The United States Department Of Energy Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
US4697197A (en) * 1985-10-11 1987-09-29 Rca Corp. Transistor having a superlattice
JP2557373B2 (ja) * 1986-04-05 1996-11-27 住友電気工業株式会社 化合物半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014017063A1 (ja) * 2012-07-24 2014-01-30 住友化学株式会社 半導体基板、半導体基板の製造方法及び複合基板の製造方法

Also Published As

Publication number Publication date
EP0243953B1 (en) 1993-01-13
AU7265387A (en) 1987-11-05
DE3783507T2 (de) 1993-07-29
JPS62256478A (ja) 1987-11-09
US4894691A (en) 1990-01-16
EP0243953A3 (en) 1990-04-25
EP0243953A2 (en) 1987-11-04
DE3783507D1 (de) 1993-02-25
CA1277440C (en) 1990-12-04
AU602143B2 (en) 1990-10-04

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